STMicroelectronics STD9N60M6 N-Kanal Dual, SMD MOSFET 600 V / 6 A, 3-Pin DPAK (TO-252)
About The STMicroelectronics STD9N60M6 N-Kanal Dual, SMD MOSFET 600 V / 6 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: 0,75 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max
STMicroelectronics STD9N60M6 N-Kanal Dual, SMD MOSFET 600 V / 6 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: 0,75 Ω, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 4.75V, Transistor-Werkstoff: Si
Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET
STMicroelectronics STD9N60M6 N-Kanal Dual, SMD MOSFET 600 V / 6 A, 3-Pin DPAK (TO-252)
Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET
Specifications of STMicroelectronics STD9N60M6 N-Kanal Dual, SMD MOSFET 600 V / 6 A, 3-Pin DPAK (TO-252) | |
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