Infineon OptiMOS-T2 IPG20N04S4L08AATMA1 N-Kanal Dual, SMD MOSFET 40 V / 20 A, 8-Pin SuperSO8 5 x 6 Dual, Drain-Source-Widerstand max.: 0,0082 O, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 2.2V, Transistor-Werkstoff: Si
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Infineon OptiMOS-T2 IPG20N04S4L08AATMA1 N-Kanal Dual, SMD MOSFET 40 V / 20 A, 8-Pin SuperSO8 5 X 6 Dual
Specifications of Infineon OptiMOS-T2 IPG20N04S4L08AATMA1 N-Kanal Dual, SMD MOSFET 40 V / 20 A, 8-Pin SuperSO8 5 X 6 Dual | |
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