onsemi SUPERFET III NTD360N80S3Z N-Kanal, SMD MOSFET Transistor & Diode 800 V / 13 A, 3-Pin DPAK (TO-252), Drain-Source-Widerstand max.: 360 mΩ, Channel-Modus: Enhancement, Gate-Schwellenspannung max.: 3.8V
Elektronische Bauelemente & Stromversorgung und Steckverbinder > Halbleiter > Diskrete Halbleiter > MOSFET
Onsemi SUPERFET III NTD360N80S3Z N-Kanal, SMD MOSFET Transistor & Diode 800 V / 13 A, 3-Pin DPAK (TO-252)
Specifications of Onsemi SUPERFET III NTD360N80S3Z N-Kanal, SMD MOSFET Transistor & Diode 800 V / 13 A, 3-Pin DPAK (TO-252) | |
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Instock | instock |