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Infineon N-Channel MOSFET, 66 A, 80 V, 8-Pin SuperSO8 5 X 6 ISC0602NLSATMA1

About The 0095 O, Maximum Gate Threshold Voltage: 2.Infineon N-Channel MOSFET, 66 A, 80 V, 8-Pin SuperSO8 5 x 6 ISC0602NLSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0

Infineon N-Channel MOSFET, 66 A, 80 V, 8-Pin SuperSO8 5 x 6 ISC0602NLSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0073 O, 0.0095 O, Maximum Gate Threshold Voltage: 2.3V, Series: OptiMOS 5

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 66 A, 80 V, 8-Pin SuperSO8 5 X 6 ISC0602NLSATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 66 A, 80 V, 8-Pin SuperSO8 5 X 6 ISC0602NLSATMA1

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Infineon N-Channel MOSFET, 66 A, 80 V, 8-Pin SuperSO8 5 X 6 ISC0602NLSATMA1
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