Infineon N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF

Name: Infineon & Infineon N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 MΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.67mm, Maximum Operating Temperature: +175 °C
Brand: Infineon
SKU: CAXD-100498
Price: 70.18 EUR
Availability: InStock

About The 35V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.Infineon N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2

Infineon N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.35V, Minimum Gate Threshold Voltage: 1.35V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.67mm, Maximum Operating Temperature: +175 °C

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Specifications of Infineon N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF
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Last Updated December 12th, 2023 02:03 am

Infineon N-Channel MOSFET, 260 A, 30 V, 3-Pin TO-220AB IRLB3813PBF

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