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IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P

About The 23mm, Maximum Operating Temperature: +175 °C.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 680 W, Maximum Gate Source Voltage: -20 V, +20 V, Length: 38

IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P, Mounting Type: Screw Mount, Maximum Drain Source Resistance: 7.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 680 W, Maximum Gate Source Voltage: -20 V, +20 V, Length: 38.23mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P

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IXYS N-Channel MOSFET, 200 A, 100 V, 4-Pin SOT-227 IXFN200N10P
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