ISSI SRAM, IS62WV51216BLL-55BLI- 8Mbit

5mm, Lifetime: 7000h, Leakage Current: 50 μA, Ripple Current: 680mA, Series: WCAP-ATUL, Tolerance: ±20%.

58mm, Coil Resistance: 86Ω, Contact Material: Silver Alloy, Depth: 34.

Dormer Countersink, 90°, 6 Piece(s), MPN: G2365.

ABB Connector Kit for Use with MS116, MS/MO132, 27.5mm Length, Accessory Type: Fixing Kit, MPN: ABB1SAM201909R1001.

Wurth Elektronik Wurth 150 μH ±20% Composite Iron Powder Toroidal Inductor, 6.) x 14mm, Lead Pitch: 11.

Infineon N-Channel MOSFET, 14 A, 950 V, 3-Pin DPAK IPD95R450P7ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 450 mO, Maximum Gate Threshold Voltage: 3.

) x 35mm, Diameter: 25mm, Maximum Operating Temperature: +105°C, Lead Pitch: 10mm.Nichicon 180μF Aluminium Electrolytic Capacitor 400V dc, Snap-In - LGU2G181MELA, Capacitance: 180µF, Dimensions: 25 (Dia.

6 V, Length: 8.

Nichicon 180μF Aluminium Electrolytic Capacitor 400V dc, Snap-In - LGU2G181MELA, Capacitance: 180µF, Dimensions: 25 (Dia.) x 35mm, Diameter: 25mm, Maximum Operating Temperature: +105°C, Lead Pitch: 10mm.

ISSI SRAM- 8Mbit, Organisation: 512k x 16 bit, Number of Bits per Word: 16bit, Maximum Random Access Time: 55ns, Address Bus Width: 19bit, Low Power: Yes, Mounting Type: Surface Mount, Package Type: BGA, Pin Count: 48, Dimensions: 8.9mm, Maximum Operating Supply Voltage: 3.8 x 7.