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Infineon N-Channel MOSFET, 6 A, 950 V, 3-Pin TO-220 FP IPA95R1K2P7XKSA1

About The Infineon N-Channel MOSFET, 6 A, 950 V, 3-Pin TO-220 FP IPA95R1K2P7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.5V, Series: CoolMOS P7

Infineon N-Channel MOSFET, 6 A, 950 V, 3-Pin TO-220 FP IPA95R1K2P7XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.12 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Series: CoolMOS P7

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 6 A, 950 V, 3-Pin TO-220 FP IPA95R1K2P7XKSA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 6 A, 950 V, 3-Pin TO-220 FP IPA95R1K2P7XKSA1

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Infineon N-Channel MOSFET, 6 A, 950 V, 3-Pin TO-220 FP IPA95R1K2P7XKSA1
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