Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO-8 IRF7341GTRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 65 mO, Maximum Gate Threshold Voltage: 1V, Number of Elements per Chip: 2
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Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO-8 IRF7341GTRPBF
Specifications of Infineon Dual N-Channel MOSFET, 5.1 A, 55 V, 8-Pin SO-8 IRF7341GTRPBF | |
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