IXYS N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2, Mounting Type: Screw Mount, Maximum Drain Source Resistance: 11 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 830 W, Maximum Gate Source Voltage: -20 V, +20 V, Length: 38.23mm, Maximum Operating Temperature: +150 °C
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IXYS N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2
Specifications of IXYS N-Channel MOSFET, 178 A, 100 V, 4-Pin SOT-227 IXTN200N10L2 | |
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