IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T
About The IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 694 W, Maximum Gate Source Voltage: -20 V, +20 V, Length: 16.26mm, Maximum Operating Temperature: +150 °C
IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T, Mounting Type: Through Hole, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 694 W, Maximum Gate Source Voltage: -20 V, +20 V, Length: 16.26mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of IXYS N-Channel MOSFET, 110 A, 250 V, 3-Pin TO-247 IXTH110N25T | |
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