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Infineon N-Channel MOSFET, 12.5 A, 700 V, 3-Pin IPAK IPS70R360P7SAKMA1

About The Infineon N-Channel MOSFET, 12.5 A, 700 V, 3-Pin IPAK IPS70R360P7SAKMA1, Package Type: IPAK SL (TO-251 SL), Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mO, Maximum Gate Threshold Voltage: 3

Infineon N-Channel MOSFET, 12.5 A, 700 V, 3-Pin IPAK IPS70R360P7SAKMA1, Package Type: IPAK SL (TO-251 SL), Mounting Type: Through Hole, Maximum Drain Source Resistance: 360 mO, Maximum Gate Threshold Voltage: 3.5V, Series: CoolMOS™ P7

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 12.5 A, 700 V, 3-Pin IPAK IPS70R360P7SAKMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 12.5 A, 700 V, 3-Pin IPAK IPS70R360P7SAKMA1

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Infineon N-Channel MOSFET, 12.5 A, 700 V, 3-Pin IPAK IPS70R360P7SAKMA1
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