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Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF

About The Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mO, Maximum Gate Threshold Voltage: 4V

Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mO, Maximum Gate Threshold Voltage: 4V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF

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Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF
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    Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF

    Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mO, Maximum Gate Threshold Voltage: 4V.

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    • Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF

    Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF

    Infineon P-Channel MOSFET, 18 A, 55 V, 3-Pin DPAK IRFR5505TRLPBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 110 mO, Maximum Gate Threshold Voltage: 4V.

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