Infineon N-Channel MOSFET, 75 A, 600 V, 8-Pin HSOF-8 IPT60R028G7XTMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 28 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V
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Infineon N-Channel MOSFET, 75 A, 600 V, 8-Pin HSOF-8 IPT60R028G7XTMA1
Specifications of Infineon N-Channel MOSFET, 75 A, 600 V, 8-Pin HSOF-8 IPT60R028G7XTMA1 | |
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