ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX
About The ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Length: 10.3mm, Maximum Operating Temperature: +150 °C
ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 68 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Length: 10.3mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of ROHM N-Channel MOSFET, 20 A, 650 V, 3-Pin TO-220FM R6520ENX | |
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