ROHM N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 RQ6C050UNTR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.3V, Maximum Power Dissipation: 1.25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±10 V, Length: 3mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
ROHM N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 RQ6C050UNTR
Specifications of ROHM N-Channel MOSFET, 5 A, 20 V, 6-Pin TSMT-6 RQ6C050UNTR | |
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