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Vishay N-Channel MOSFET, 137.5 A, 80 V, 8-Pin PowerPAK SO-8 SIR5802DP-T1-RE3

About The 5 A, 80 V, 8-Pin PowerPAK SO-8 SIR5802DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.004 Ω, Maximum Gate Threshold Voltage: 4V, Series: N-Channel 80 V

Vishay N-Channel MOSFET, 137.5 A, 80 V, 8-Pin PowerPAK SO-8 SIR5802DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.004 Ω, Maximum Gate Threshold Voltage: 4V, Series: N-Channel 80 V

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Vishay N-Channel MOSFET, 137.5 A, 80 V, 8-Pin PowerPAK SO-8 SIR5802DP-T1-RE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 137.5 A, 80 V, 8-Pin PowerPAK SO-8 SIR5802DP-T1-RE3

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Vishay N-Channel MOSFET, 137.5 A, 80 V, 8-Pin PowerPAK SO-8 SIR5802DP-T1-RE3
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Vishay N-Channel MOSFET, 248 A, 80 V, 4-Pin PowerPAK 8 x 8L SQJ180EP-T1_GE3

Vishay N-Channel MOSFET, 248 A, 80 V, 4-Pin PowerPAK 8 x 8L SQJ180EP-T1_GE3

Vishay N-Channel MOSFET, 248 A, 80 V, 4-Pin PowerPAK 8 x 8L SQJ180EP-T1_GE3.

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