Infineon N-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 IRLML2060TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 480 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +16 V, Length: 3.04mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 IRLML2060TRPBF
Specifications of Infineon N-Channel MOSFET, 1.2 A, 60 V, 3-Pin SOT-23 IRLML2060TRPBF | |
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