Infineon N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSATMA1
About The 1mm, Maximum Operating Temperature: +150 °C.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 96 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6
Infineon N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.4 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 96 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 6.1mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSATMA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 100 A, 30 V, 8-Pin TDSON BSC011N03LSATMA1 | |
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