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Taiwan Semiconductor N-Channel MOSFET, 8 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB600CI C0G

About The Taiwan Semiconductor N-Channel MOSFET, 8 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB600CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 32 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

Taiwan Semiconductor N-Channel MOSFET, 8 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB600CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 32 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Taiwan Semiconductor N-Channel MOSFET, 8 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB600CI C0G

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Taiwan Semiconductor N-Channel MOSFET, 8 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB600CI C0G

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Taiwan Semiconductor N-Channel MOSFET, 8 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB600CI C0G
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    • Taiwan Semiconductor N-Channel MOSFET, 8 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB600CI C0G

    Taiwan Semiconductor N-Channel MOSFET, 8 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB600CI C0G

    Taiwan Semiconductor N-Channel MOSFET, 8 A, 600 V, 3-Pin ITO-220S Taiwan Semi TSM60NB600CI C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 32 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.4V.

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