Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V
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Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 X 8 SIHH186N60EF-T1GE3
Specifications of Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 X 8 SIHH186N60EF-T1GE3 | |
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