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Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 X 8 SIHH186N60EF-T1GE3

About The Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH186N60EF-T1GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 X 8 SIHH186N60EF-T1GE3

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 X 8 SIHH186N60EF-T1GE3

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Vishay N-Channel MOSFET, 10 A, 16 A, 650 V, 4-Pin PowerPAK 8 X 8 SIHH186N60EF-T1GE3
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