Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin TO-220 FP SiHA690N60E-GE3
About The Vishay N-Channel MOSFET, 2.7 A, 4
Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin TO-220 FP SiHA690N60E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin TO-220 FP SiHA690N60E-GE3
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Vishay N-Channel MOSFET, 2.7 A, 4.3 A, 650 V, 3-Pin TO-220 FP SiHA690N60E-GE3 | |
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