Infineon P-Channel MOSFET, 15 A, 30 V, 8-Pin SOIC IRF9321TRPBF
About The 3V, Maximum Power Dissipation: 2.Infineon P-Channel MOSFET, 15 A, 30 V, 8-Pin SOIC IRF9321TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11
Infineon P-Channel MOSFET, 15 A, 30 V, 8-Pin SOIC IRF9321TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 11.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.3V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 5mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon P-Channel MOSFET, 15 A, 30 V, 8-Pin SOIC IRF9321TRPBF
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon P-Channel MOSFET, 15 A, 30 V, 8-Pin SOIC IRF9321TRPBF | |
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