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Onsemi MJD45H11T4G PNP Transistor, -8 A, -80 V, 3-Pin DPAK

About The 75 W, Minimum DC Current Gain: 60, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 90 MHz, Dimensions: 2.22mm, Maximum Operating Temperature: +150 °C, Length: 6

onsemi MJD45H11T4G PNP Transistor, -8 A, -80 V, 3-Pin DPAK, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Power Dissipation: 1.75 W, Minimum DC Current Gain: 60, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 90 MHz, Dimensions: 2.38 x 6.73 x 6.22mm, Maximum Operating Temperature: +150 °C, Length: 6.73mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Bipolar Transistors

Onsemi MJD45H11T4G PNP Transistor, -8 A, -80 V, 3-Pin DPAK

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > Bipolar Transistors

Specifications of Onsemi MJD45H11T4G PNP Transistor, -8 A, -80 V, 3-Pin DPAK

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Onsemi MJD45H11T4G PNP Transistor, -8 A, -80 V, 3-Pin DPAK
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