STMicroelectronics N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STW10NK80Z
About The .5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20
STMicroelectronics N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STW10NK80Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
STMicroelectronics N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STW10NK80Z
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of STMicroelectronics N-Channel MOSFET, 9 A, 800 V, 3-Pin TO-247 STW10NK80Z | |
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