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Infineon N-Channel MOSFET, 6.2 A, 650 V, 3-Pin TO-220 SPP06N60C3XKSA1

About The 9V, Minimum Gate Threshold Voltage: 2.36mm, Maximum Operating Temperature: +150 °C

Infineon N-Channel MOSFET, 6.2 A, 650 V, 3-Pin TO-220 SPP06N60C3XKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 750 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 74 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.36mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 6.2 A, 650 V, 3-Pin TO-220 SPP06N60C3XKSA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 6.2 A, 650 V, 3-Pin TO-220 SPP06N60C3XKSA1

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Infineon N-Channel MOSFET, 6.2 A, 650 V, 3-Pin TO-220 SPP06N60C3XKSA1
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