Infineon N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 SPW11N80C3FKSA1
About The Infineon N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 SPW11N80C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 450 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2
Infineon N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 SPW11N80C3FKSA1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 450 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 156 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 21.1mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 SPW11N80C3FKSA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 11 A, 800 V, 3-Pin TO-247 SPW11N80C3FKSA1 | |
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