Vishay Dual N-Channel MOSFET, 31.8 A, 70 V, 8-Pin PowerPAIR 3 x 3S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0176 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Number of Elements per Chip: 2, Series: TrenchFET, MPN: SIZ256DT-T1-GE3
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay Dual N-Channel MOSFET, 31.8 A, 70 V, 8-Pin PowerPAIR 3 X 3S
Specifications of Vishay Dual N-Channel MOSFET, 31.8 A, 70 V, 8-Pin PowerPAIR 3 X 3S | |
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