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STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB100N10F7

About The STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB100N10F7, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB100N10F7, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.4mm, Maximum Operating Temperature: +175 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB100N10F7

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB100N10F7

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STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin D2PAK STB100N10F7
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