Infineon N-Channel MOSFET, 56 A, 120 V, 3-Pin I2PAK IPI147N12N3GAKSA1
About The 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.36mm, Maximum Operating Temperature: +175 °C
Infineon N-Channel MOSFET, 56 A, 120 V, 3-Pin I2PAK IPI147N12N3GAKSA1, Package Type: I2PAK (TO-262), Mounting Type: Through Hole, Maximum Drain Source Resistance: 14.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.36mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 56 A, 120 V, 3-Pin I2PAK IPI147N12N3GAKSA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 56 A, 120 V, 3-Pin I2PAK IPI147N12N3GAKSA1 | |
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