Infineon Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC IRF7105TRPBF, Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 160 mΩ, 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2 W, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.5mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC IRF7105TRPBF
Specifications of Infineon Dual N/P-Channel-Channel MOSFET, 2.3 A, 3.5 A, 25 V, 8-Pin SOIC IRF7105TRPBF | |
---|---|
Category | |
Instock | instock |
Last Updated