Infineon N-Channel MOSFET, 73 A, 80 V, 3-Pin DPAK IPD096N08N3GATMA1
About The Infineon N-Channel MOSFET, 73 A, 80 V, 3-Pin DPAK IPD096N08N3GATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.5V, Series: OptiMOS™ 3
Infineon N-Channel MOSFET, 73 A, 80 V, 3-Pin DPAK IPD096N08N3GATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.0096 Ω, Maximum Gate Threshold Voltage: 3.5V, Series: OptiMOS™ 3
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Infineon N-Channel MOSFET, 73 A, 80 V, 3-Pin DPAK IPD096N08N3GATMA1
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Infineon N-Channel MOSFET, 73 A, 80 V, 3-Pin DPAK IPD096N08N3GATMA1 | |
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