Vishay Dual N-Channel MOSFET, 335 A, 25 V, 8-Pin PowerPAK SO-8, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.00058 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.1V, Series: TrenchFET, MPN: SIRA20BDP-T1-GE3
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Vishay Dual N-Channel MOSFET, 335 A, 25 V, 8-Pin PowerPAK SO-8
Specifications of Vishay Dual N-Channel MOSFET, 335 A, 25 V, 8-Pin PowerPAK SO-8 | |
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