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Nexperia P-Channel MOSFET, 470 MA, 30 V, 3-Pin SOT-23 BSH203,215

About The 4V, Maximum Power Dissipation: 417 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 3mm, Maximum Operating Temperature: +150 °C.Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0

Nexperia P-Channel MOSFET, 470 mA, 30 V, 3-Pin SOT-23 BSH203,215, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.68V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 417 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Length: 3mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Nexperia P-Channel MOSFET, 470 MA, 30 V, 3-Pin SOT-23 BSH203,215

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Nexperia P-Channel MOSFET, 470 MA, 30 V, 3-Pin SOT-23 BSH203,215

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Nexperia P-Channel MOSFET, 470 MA, 30 V, 3-Pin SOT-23 BSH203,215
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