Onsemi N-Channel MOSFET, 337 A, 80 V, 8-Pin DFN NVMTS1D2N08HOS
About The 1mm, Maximum Operating Temperature: +175 °C.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 8
onsemi N-Channel MOSFET, 337 A, 80 V, 8-Pin DFN NVMTS1D2N08HOS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 8.1mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 337 A, 80 V, 8-Pin DFN NVMTS1D2N08HOS
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi N-Channel MOSFET, 337 A, 80 V, 8-Pin DFN NVMTS1D2N08HOS | |
|---|---|
| Category | |
| Instock | instock |
Last Updated
Rating :- 9.84 /10
Votes :- 5
