Onsemi Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN ON Semiconductor NVMFD6H840NLT1G

Rating :- 9.58 /10

Votes :- 9

Maxim Integrated MAX86140ENP+T Biometric Sensor, 20-Pin, THIN-WLP-20

Maxim Integrated MAX86140ENP+T Biometric Sensor, 20-Pin, THIN-WLP-20, Sensor Technology: Optical, Sensor Application: Heart Rate Monitoring, Output Type: Digital.

CHEMI-CON 330μF Aluminium Electrolytic Capacitor 250V dc, Radial, Through Hole - EKXJ251ELL331MM40S

5mm, Lifetime: 12000h, Leakage Current: 3400 μA, Ripple Current: 1460mArms, Tolerance: ±20%.CHEMI-CON 330μF Aluminium Electrolytic Capacitor 250V dc, Radial, Through Hole - EKXJ251ELL331MM40S, Capacitance: 330µF, Dimensions: 18 x 40mm, Minimum Operating Temperature: -40°C, Diameter: 18mm, Maximum Operating Temperature: +105°C, Lead Pitch: 7.

onsemi Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN NVMFD6H840NLT1GOS

8 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.onsemi Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN NVMFD6H840NLT1GOS, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.

Electrical & Automation & Cables

Micro-Measurements Strain Gauge, ±5% Range, 350Ω

Micro-Measurements Strain Gauge, ±5% Range, 350Ω, Terminal Type: 2 Element T Rosette, Housing Material: STC 13 Aluminium, Gauge Length: 3.18mm, Width: 4.19mm, Minimum Operating Temperature: -75°C, Maximum Operating Temperature: +175°C, MPN: CEA-13-125UTA-350.

Automation & Control Gear

Sensors

Strain Gauges

Micro-Measurements

Panasonic 56Ω, 0612 (1632M) Thick Film Resistor ±1% 0.75W - ERJB2AF560V

Panasonic 56Ω, 0612 (1632M) Thick Film Resistor ±1% 0.75W - ERJB2AF560V.

Electrical & Automation & Cables

Passive Components

Fixed Resistors

Surface Mount Resistors

Panasonic

Alpha Wire 67150 Series Purple 1.5 mm² Hook Up Wire, 16 AWG, 84/0.16 mm², 50m, Polyphenylene Ether Insulation

16 mm², 50m, Polyphenylene Ether Insulation, Voltage Rating: 600 V, Wire Style: UL11028, MPN: 67150 VI.5 mm² Hook Up Wire, 16 AWG, 84/0.

onsemi Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN ON Semiconductor NVMFD6H840NLT1G

8 mO, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 3.

onsemi N-Channel MOSFET, 337 A, 80 V, 8-Pin DFN NVMTS1D2N08HOS

1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 8.

onsemi Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN ON Semiconductor NVMFD6H840NLT1G

onsemi Dual N-Channel MOSFET, 74 A, 80 V, 8-Pin DFN ON Semiconductor NVMFD6H840NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.

onsemi N-Channel MOSFET, 337 A, 80 V, 8-Pin DFN NVMTS1D2N08HOS

1mm, Maximum Operating Temperature: +175 °C.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Length: 8.