Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 TK20E60W,S1VX(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 155 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10.16mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 TK20E60W,S1VX(S
Specifications of Toshiba N-Channel MOSFET, 20 A, 600 V, 3-Pin TO-220 TK20E60W,S1VX(S | |
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