Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 230 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 10mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M
Specifications of Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220SIS TK16A60W5,S4VX(M | |
---|---|
Category | |
Instock | instock |
Last Updated