Vishay N-Channel MOSFET, 2.9 A, 800 V, 3-Pin DPAK SIHD2N80AE-GE3

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Vishay N-Channel MOSFET, 2.9 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 62.73mm, Maximum Operating Temperature: +150 °C.9 A, 800 V, 3-Pin DPAK SIHD2N80AE-GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.

5mm, Manufacturer Series: YSR, Maximum Energy Capacity Per Hour: 150000Nm, Maximum Energy Capacity Per Cycle: 160Nm, Minimum Operating Temperature: -10°C, Maximum Operating Temperature: +80°C, MPN: YSR-25-40-C.Festo Shock Absorber, 152mm Body Length, Overall Length: 213.

9 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 62.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Length: 6.9 A, 800 V, 3-Pin DPAK SIHD2N80AE-GE3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.Vishay N-Channel MOSFET, 2.

Festo Shock Absorber, 152mm Body Length, Overall Length: 213.5mm, Manufacturer Series: YSR, Maximum Energy Capacity Per Hour: 150000Nm, Maximum Energy Capacity Per Cycle: 160Nm, Minimum Operating Temperature: -10°C, Maximum Operating Temperature: +80°C, MPN: YSR-25-40-C.