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Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRRPBF

About The Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRRPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4

Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRRPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRRPBF

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRRPBF

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Vishay P-Channel MOSFET, 6.8 A, 200 V, 3-Pin D2PAK IRF9640STRRPBF
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