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Nexperia N-Channel MOSFET, 330 MA, 60 V, 3-Pin SOT-23 BSN20BKR

About The 6V, Maximum Power Dissipation: 1.8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1

Nexperia N-Channel MOSFET, 330 mA, 60 V, 3-Pin SOT-23 BSN20BKR, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.8 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 1.67 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 3mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Nexperia N-Channel MOSFET, 330 MA, 60 V, 3-Pin SOT-23 BSN20BKR

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Nexperia N-Channel MOSFET, 330 MA, 60 V, 3-Pin SOT-23 BSN20BKR

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Nexperia N-Channel MOSFET, 330 MA, 60 V, 3-Pin SOT-23 BSN20BKR
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