Vishay N-Channel MOSFET, 8.1 A, 500 V, 3-Pin D2PAK SIHF840STRL-GE3, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 850 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 125 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Vishay N-Channel MOSFET, 8.1 A, 500 V, 3-Pin D2PAK SIHF840STRL-GE3
Specifications of Vishay N-Channel MOSFET, 8.1 A, 500 V, 3-Pin D2PAK SIHF840STRL-GE3 | |
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