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Infineon N-Channel MOSFET, 77 A, 250 V, 8-Pin PG HSOG-8 (TOLG) IPTG210N25NM3FDATMA1

About The Infineon N-Channel MOSFET, 77 A, 250 V, 8-Pin PG HSOG-8 (TOLG) IPTG210N25NM3FDATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.021 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

Infineon N-Channel MOSFET, 77 A, 250 V, 8-Pin PG HSOG-8 (TOLG) IPTG210N25NM3FDATMA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.021 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Infineon N-Channel MOSFET, 77 A, 250 V, 8-Pin PG HSOG-8 (TOLG) IPTG210N25NM3FDATMA1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of Infineon N-Channel MOSFET, 77 A, 250 V, 8-Pin PG HSOG-8 (TOLG) IPTG210N25NM3FDATMA1

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Infineon N-Channel MOSFET, 77 A, 250 V, 8-Pin PG HSOG-8 (TOLG) IPTG210N25NM3FDATMA1
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