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ROHM P-Channel MOSFET, 4 A, 12 V, 3-Pin SOT-323 RAF040P01TCL

About The 3V, Maximum Power Dissipation: 800 mW, Maximum Gate Source Voltage: -8 V, Forward Diode Voltage: 1.82mm

ROHM P-Channel MOSFET, 4 A, 12 V, 3-Pin SOT-323 RAF040P01TCL, Package Type: SOT-323T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 68 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.3V, Maximum Power Dissipation: 800 mW, Maximum Gate Source Voltage: -8 V, Forward Diode Voltage: 1.2V, Height: 0.82mm

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

ROHM P-Channel MOSFET, 4 A, 12 V, 3-Pin SOT-323 RAF040P01TCL

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of ROHM P-Channel MOSFET, 4 A, 12 V, 3-Pin SOT-323 RAF040P01TCL

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ROHM P-Channel MOSFET, 4 A, 12 V, 3-Pin SOT-323 RAF040P01TCL
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