onsemi N-Channel MOSFET, 2.7 A, 100 V, 3-Pin SOT-23 FDN8601, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 183 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 1.4mm, Maximum Operating Temperature: +150 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 2.7 A, 100 V, 3-Pin SOT-23 FDN8601
Specifications of Onsemi N-Channel MOSFET, 2.7 A, 100 V, 3-Pin SOT-23 FDN8601 | |
---|---|
Category | |
Instock | instock |
Last Updated