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STMicroelectronics N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK STD1NK60-1

About The 7V, Minimum Gate Threshold Voltage: 2.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3

STMicroelectronics N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK STD1NK60-1, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Minimum Gate Threshold Voltage: 2.25V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Length: 6.6mm, Maximum Operating Temperature: +150 °C

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

STMicroelectronics N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK STD1NK60-1

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of STMicroelectronics N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK STD1NK60-1

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STMicroelectronics N-Channel MOSFET, 1 A, 600 V, 3-Pin IPAK STD1NK60-1
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