Vishay N-Channel MOSFET, 16 A, 40 V, 8-Pin PowerPAK 1212-8W SQS484CENW-T1_GE3, Maximum Drain Source Resistance: 0.011 Ω, 0.0095 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Series: AEC-Q101, Automotive, TrenchFET®
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Vishay N-Channel MOSFET, 16 A, 40 V, 8-Pin PowerPAK 1212-8W SQS484CENW-T1_GE3
Specifications of Vishay N-Channel MOSFET, 16 A, 40 V, 8-Pin PowerPAK 1212-8W SQS484CENW-T1_GE3 | |
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