Onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG
About The onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG, Mounting Type: Through Hole, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 188 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.28mm, Maximum Operating Temperature: +175 °C
onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG, Mounting Type: Through Hole, Maximum Drain Source Resistance: 13 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 188 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Length: 10.28mm, Maximum Operating Temperature: +175 °C
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi N-Channel MOSFET, 76 A, 100 V, 3-Pin TO-220 NTP6410ANG | |
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