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ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11

About The ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.45 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.45 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11

Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs

Specifications of ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11

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ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11
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    • ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11

    ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11

    45 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V.ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.

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    • SAM, Steel Wire

    SAM, Steel Wire

    SAM, Steel Wire, Weight: 100g, MPN: 371022.

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    • ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11

    ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11

    ROHM SiC N-Channel MOSFET, 10 A, 1200 V, 3-Pin TO-247N SCT2450KEHRC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.45 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V.

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