Onsemi N-Channel MOSFET, 8 A, 100 V, 3-Pin DPAK FDD86102LZ
About The onsemi N-Channel MOSFET, 8 A, 100 V, 3-Pin DPAK FDD86102LZ, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 54 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6
onsemi N-Channel MOSFET, 8 A, 100 V, 3-Pin DPAK FDD86102LZ, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 54 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Onsemi N-Channel MOSFET, 8 A, 100 V, 3-Pin DPAK FDD86102LZ
Electronic Components & Power & Connectors > Semiconductors > Discrete Semiconductors > MOSFETs
Specifications of Onsemi N-Channel MOSFET, 8 A, 100 V, 3-Pin DPAK FDD86102LZ | |
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